SK Hynix has announced the commencement of production of their flagship high bandwidth memory (HBM3E) stacked 12-layer chip, in line with the company’s previously disclosed plans.
The HBM3E stacked 12-layer design will increase capacity to 36GB (3GB per DRAM) from the previously manufactured 8-layer 24GB HBM3E, which began delivery to customers in March.
HBM, or high bandwidth memory chips, are in high demand from AI chip customers, with the 12-layer DRAM technology increasing processing capacity by 50% and achieving a maximum speed of 9.6Gbps, the highest in the market. The chip retains its thin profile.
Justin Kim, Head of SK Hynix’s AI Infrastructure Product Group, states that the company continues to advance technology to maintain their position as a leading memory chip provider for AI, facing increased challenges in the future.
TLDR: SK Hynix advances production of HBM3E 12-layer memory chips with increased capacity and processing speeds, aiming to maintain their leadership in the AI chip market.
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