Samsung has announced the commencement of production for their V-NAND 9th Gen mainline with a capacity of 1Tb (Terabit) utilizing Triple-level cell (TLC) architecture to cater to products requiring higher performance and memory capacities, particularly in the era of AI.
The V-NAND 9th Gen has increased chip density compared to its predecessor, with each bit taking up 50% less space than the 8th Gen. The number of cell layers has also increased, resulting in a 33% boost in data transfer speeds to 3.2 Gbps, supporting PCIe 5.0 standards, while reducing energy consumption by 10%.
Production of V-NAND 9th Gen has commenced this month, with the next-generation Quad-level cell (QLC) technology expected to begin production in the latter half of the year.
TLDR: Samsung introduces V-NAND 9th Gen with TLC architecture, higher chip density, increased speeds, and lower energy consumption, with QLC technology slated for production later this year.
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